upa1917 Renesas Electronics Corporation., upa1917 Datasheet - Page 4

• Manufacturer Part Number: upa1917
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
- 20
- 16
- 12
-1.3
-0.8
-0.3
140
120
100
- 8
- 4
80
60
40
20
0
-0.01
-50
0
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs DRAIN CURRENT
-0.2
V
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
ch
-0.1
0
- Drain to Source Voltage - V
- Channel Temperature - C
I
D
– Drain Current - A
-0.4
50
-1
1.8 V
-0.6
V
I
Pulsed
V
D
DS
100
GS
-10
= 1 mA
V
-0.8
= 10 V
= 4.5 V
GS
T
A
= 4.5 V
= 125 C
2.5 V
25 C
-25 C
75°C
Data Sheet G15925EJ1V0DS
150
-100
-1
-0.00001
0.01
140
120
100
100
-0.0001
0.1
80
60
40
20
10
-0.001
1
-0.01
-0.01
-0.01
-100
-0.1
-10
FORWARD TRANSFER CHARACTERISTICS
-1
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
T
DRAIN TO SOURCE ON-STATE
RESISTANCE vs.DRAIN CURRENT
A
V
= 25 C
GS
125 C
-0.1
-0.1
25 C
75 C
- Gate to Source Voltage - V
I
I
D
D
- Drain Current - A
- Drain Current - A
-1
-1
-1
T
A
= 125 C
75 C
25 C
25 C
-10
Pulsed
V
-10
-2
GS
Pulsed
V
T
Pulsed
V
DS
A
= 2.5 V
DS
= 125 C
= 10 V
PA1917
75 C
25 C
= 10 V
25 C
-100
-100
-3