upa1918 Renesas Electronics Corporation., upa1918 Datasheet - Page 4

• Manufacturer Part Number: upa1918
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
-2.4
-1.6
-1.2
300
250
200
150
100
-15
-12
50
-2
-9
-6
-3
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-0.01
-50
0
Pulsed
V
Pulsed
GS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
= 10 V
V
T
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
DS
ch
-0.5
-0.1
- Channel Temperature - C
- Drain to Source Voltage - V
0
I
D
- Drain Current - A
V
50
-1
-1
GS
= 10 V
V
I
D
DS
100
-1.5
-10
= 1.0 mA
T
4.0 V
A
= 10 V
4.5 V
75°C
25°C
= 125°C
25°C
Data Sheet G15926EJ1V0DS
-100
150
-2
-0.0001
0.01
-0.001
100
300
250
200
150
100
0.1
-0.01
10
50
-100
-0.1
1
-10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-0.01
-0.01
-1
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
0
V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
DS
GS
V
Pulsed
T
A
DS
= 10 V
= 4.5 V
= 125°C
= 10 V
-0.1
-0.1
V
-1
75°C
25°C
25°C
GS
I
I
D
D
- Gate to Source Voltage - V
- Drain Current - A
- Drain Current - A
-2
-1
-1
T
A
-3
= 25°C
125°C
T
-10
-10
25°C
75°C
A
75°C
25°C
= 125°C
PA1918
25°C
-4
-100
-100
-5