upa1918 Renesas Electronics Corporation., upa1918 Datasheet - Page 3

• Manufacturer Part Number: upa1918
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
-0.01
-100
-0.1
120
100
-10
80
60
40
20
-1
0
-0.1
0
FORWARD BIAS SAFE OPERATING AREA
R
(V
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Single Pulse
Mounted on FR-4 board of
50 mm × 50 mm × 1.6 mm
DS(on)
GS
25
V
= 10 V)
T
I
DS
D(DC)
A
Limited
- Ambient Temperature - C
10 ms
- Drain to Source Voltage - V
50
100 ms
1000
-1
100
10
75
1
1 m
5 s
I
D(pulse)
Single Pulse
100
-10
A
PW = 100 s
125
= 25°C)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10 m
150
1 ms
W ithout board
Data Sheet G15926EJ1V0DS
-100
175
100 m
PW - Pulse Width - s
1
Mounted on FR-4 board of
50 mm × 50 mm × 1.6 mm
2.25
1.75
1.25
0.75
0.25
1.5
0.5
2
1
0
0
10
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
T
A
- Ambient Temperature - C
50
100
75
100
1000
125
PA1918
150
175
3