upa1919 Renesas Electronics Corporation., upa1919 Datasheet - Page 4

• Manufacturer Part Number: upa1919
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
- 24
- 20
- 16
- 12
- 1.4
- 1.2
- 0.8
- 0.6
- 0.4
160
120
- 8
- 4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
40
- 1
0
0
-50
-50
0
I
Pulsed
P ulsed
D
= −3.0 A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
G S
V
T
T
DS
ch
ch
= −4.5 V
- 0.5
- Drain to Source Voltage - V
- Channel Temperature - °C
- Channel Temperature - °C
0
0
V
GS
= −2.5 V
50
- 1
50
V
−4.0 V
GS
V
I
D
V
DS
= −4.5 V
= −1.0 m A
GS
−2.5 V
- 1.5
100
= −10 V
100
= −4.0 V
Data Sheet G16298EJ2V0DS
150
- 2
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
- 0 .0 0 0 1
0.1
10
160
120
- 0 .0 0 1
1
- 0.01
80
40
- 0 .0 1
- 1 0 0
0
- 0 .1
- 1 0
0
- 1
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
DS
0
= −10 V
V
P u ls e d
- 2
V
D S
V
- 0.1
GS
GS
= − 1 0 V
- 0 .5
- Gate to Source Voltage - V
I
D
- Gate to Source Voltage - V
- Drain Current - A
- 4
- 1
- 1
- 6
- 1 .5
T
- 8
A
μ
T
- 10
= 125°C
A
I
Pulsed
D
−25°C
PA1919
- 2
= 1 2 5 °C
75°C
25°C
= −3.0 A
− 2 5 °C
- 10
7 5 °C
2 5 °C
- 2 .5
- 100
- 12
- 3