upa1919 Renesas Electronics Corporation., upa1919 Datasheet - Page 2

• Manufacturer Part Number: upa1919
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
0
TEST CIRCUIT 1 SWITCHING TIME
GS(−)
τ = 1 s
Duty Cycle ≤ 1%
PG.
μ
τ
CHARACTERISTICS
R
G
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
R
V
V
| y
C
t
t
Q
Q
I
I
DS(on)1
DS(on)2
DS(on)3
C
C
GS(off)
d(on)
d(off)
Q
F(S-D)
V
V
DSS
GSS
A
t
t
V
oss
fs
iss
rss
GS
GD
r
f
GS(−)
DS(−)
G
0
DS
0
= 25°C)
|
10%
t
Data Sheet G16298EJ2V0DS
d(on)
90%
V
R
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
I
I
D
F
t
GS
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
G
DD
GS
on
= 6.0 A, V
= −6.0 A
= 10 Ω
10% 10%
= −16 V
t
= −20 V, V
= −10 V, I
= −10 V, I
= −10 V
= −4.0 V
= m12 V, V
= −4.5 V, I
= −4.0 V, I
= −2.5 V, I
= 0 V
= −10 V, I
= −4.0 V
r
V
t
GS
d(off)
TEST CONDITIONS
GS
t
D
D
D
off
90%
GS
D
D
D
DS
= 0 V
= −1.0 mA
= −3.0 A
= −3.0 A
= −3.0 A
= −3.0 A
= −3.0 A
90%
t
f
= 0 V
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
−0.5
5.0
I
G
= −2 mA
50 Ω
TYP.
−1.0
0.93
680
170
9.5
6.0
1.5
2.4
46
48
63
95
15
19
47
65
D.U.T.
MAX.
−1.0
−1.5
m10
58
60
84
μ
PA1919
UNIT
mΩ
mΩ
mΩ
μ
μ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
S
V
A
A
R
V
DD
L