upa1820 Renesas Electronics Corporation., upa1820 Datasheet - Page 3
upa1820
Manufacturer Part Number
upa1820
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1820.pdf
(6 pages)
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TYPICAL CHARACTERISTICS (T
120
100
0.01
80
60
40
20
100
0.1
0
10
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
0
FORWARD BIAS SAFE OPERATING AREA
1
0.1
Single pulse
Mounted on Ceramic Substrate
of 5000 mm
25
T
R
V
(V
A
DS
DS(on)
- Ambient Temperature - C
GS
I
- Drain to Source Voltage - V
D(DC)
50
= 4.5 V)
Limited
1000
100
2
1
10
x 1.1 mm
75
1
1 m
Single pulse
100
I
D(pulse)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
A
125
= 25°C)
10
10 m
PW = 1 ms
150
100 ms
10 ms
DC
175
Data Sheet G16274EJ1V0DS
100
100 m
PW - Pulse Width - s
Mounted on FR-4 board
Mounted on FR-4 board
of 2500 mm
of 2500 mm
Mounted on Ceramic
Substrate of 5000 mm
1
125 C/W
125 C/W
62.5 C/W
2
2
2.5
1.5
0.5
x 1.6 mm
x 1.6 mm
2
1
0
10
0
Mounted on FR-4 board
of 2500 mm
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
T
A
2
- Ambient Temperature - C
x 1.1 mm
50
100
2
x 1.6 mm
75
Mounted on Ceramic
Substrate of
5000 mm
100
1000
2
125
x 1.1 mm
150
PA1820
175
3