upa1820 Renesas Electronics Corporation., upa1820 Datasheet - Page 2

• Manufacturer Part Number: upa1820
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
V
2
0
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
Duty Cycle
TEST CIRCUIT 1 SWITCHING TIME
PG.
= 1 s
CHARACTERISTICS
R
1%
G
D.U.T.
R
V
DD
L
V
Wave Form
I
Wave Form
D
GS
SYMBOL
R
R
R
V
V
| y
C
t
t
Q
Q
I
I
DS(on)1
DS(on)2
DS(on)3
C
GS(off)
C
d(on)
d(off)
Q
F(S-D)
Q
A
GSS
DSS
t
t
t
oss
rss
GS
GD
rr
fs
iss
r
f
V
I
G
rr
D
= 25°C)
|
GS
0
0
Data Sheet G16274EJ1V0DS
t
10%
d(on)
10%
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A / s
D
F
F
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
DD
GS
G
t
= 12 A
= 12 A, V
= 12 A, V
90%
on
= 10
= 20 V, V
= 10 V, I
= 10 V, I
= 10 V
= ±12 V, V
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
= 0 V
= 10 V, I
= 4.0 V
= 16 V
= 4.0 V
t
r
V
I
GS
D
t
d(off)
TEST CONDITIONS
GS
GS
D
D
D
D
D
D
GS
t
= 1.0 mA
= 6.0 A
= 0 V
= 0 V
= 6.0 A
off
DS
= 6.0 A
= 6.0 A
= 6.0 A
90%
90%
= 0 V
t
10%
= 0 V
f
PG.
TEST CIRCUIT 2 GATE CHARGE
MIN.
0.5
11
I
G
50
= 2 mA
TYP.
2020
21.5
0.81
600
430
1.0
6.8
7.0
8.7
2.6
18
56
75
52
27
13
61
40
D.U.T.
MAX.
±10
1.0
1.5
8.6
8.8
12
PA1820
UNIT
m
m
m
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
S
V
A
A
R
V
L
DD