upa1801gr-9jg Renesas Electronics Corporation., upa1801gr-9jg Datasheet - Page 3

• Manufacturer Part Number: upa1801gr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

• • • •
TYPICAL CHARACTERISTICS (T
1.5
0.5
100
40
80
60
20
1
0
50
24
20
16
12
0
4
0
8
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
I
D
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
DS
= 1 mA
Pulsed
= 10 V
T
V
ch
30
V
T
GS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
A
0
- Channel Temperature - ˚C
= 4.5 V
- Ambient Temperature - ˚C
0.2
- Drain to Source Voltage - V
60
50
0.4
4.0 V
90
2.5 V
A
= 25 C)
100
120
0.6
Data Sheet D12135EJ1V0DS00
150
150
0.8
0.0001
0.001
0.01
0.01
0.01
0.1
100
100
10
0.1
0.1
10
10
1
0.001
1
0.1
1
0
T
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm x 1.1 mm
V
V
A
DRAIN CURRENT
FORWARD TRANSFER ADMMITTANCE vs.
DS
= 25 ˚C
FORWARD BIAS SAFE OPERATING AREA
DS =
= 10 V
TRANSFER CHARACTERISTICS
10 V
0.01
V
V
DS
0.5
GS
- Drain to Source Voltage - V
- Gate to Sorce Voltage - V
I
D(DC)
T
2
1
A
0.1
I
= 25 ˚C
D
- Drain Current - A
125˚C
I
D(pulse)
25˚C
75˚C
1
1
10
1.5
10
100
PA1801
100
2
3