upa1801gr-9jg Renesas Electronics Corporation., upa1801gr-9jg Datasheet - Page 2

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upa1801gr-9jg

Manufacturer Part Number
upa1801gr-9jg
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
• • • •
• • • •
ELECTRICAL CHARACTERISTICS (T
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
0
TEST CIRCUIT 1 SWITCHING TIME
GS
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
R
1 %
G
D.U.T.
R
V
DD
L
V
Wave Form
I
Wave Form
D
GS
SYMBOL
R
R
R
V
V
| y
t
t
I
DS(on)1
DS(on)2
DS(on)3
C
Q
Q
I
C
C
GS(off)
A
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
t
t
t
oss
rss
GS
GD
rr
fs
iss
r
f
G
rr
V
I
= 25 °C)
D
|
GS
0
0
Data Sheet D12135EJ1V0DS00
10 %
10 %
t
d(on)
V
V
V
V
V
V
V
V
V
f = 1 MHz
V
I
V
R
V
I
V
I
I
di/dt = 100 A/ S
D
D
F
F
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS(on)
G
DD
GS
= 3.0 A
= 6.0 A
= 6.0 A, V
= 6.0 A, V
t
90 %
on
= 10
= 20 V, V
= 10 V, I
= 10 V, I
= 10 V
= ±8.0 V, V
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
= 0 V
= 10 V
= 10 V
= 4.0 V
t
r
= 4.0 V
V
I
GS
D
t
d(off)
TEST CONDITIONS
(on)
GS
GS
D
D
GS
D
D
D
t
= 1 mA
= 3.0 A
off
= 3.0 A
= 3.0 A
= 3.0 A
= 0 V
= 0 V
90 %
DS
90 %
= 0 V
t
10 %
f
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
0.5
1.0
I
G
50
= 2 mA
TYP.
16.5
0.75
970
700
320
100
0.7
13
16
21
30
95
90
21
95
97
2
9
D.U.T.
MAX.
±10
1.5
10
24
25
34
UNIT
PA1801
m
m
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A
R
V
L
DD

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