upa1818 Renesas Electronics Corporation., upa1818 Datasheet - Page 5

• Manufacturer Part Number: upa1818
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

30
20
10
30
20
10
10000
0
- 0.01
0
- 0.01
1000
100
10
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
- 0.01
V
Pulsed
GS
= 2.5 V
T
T
A
SWITCHING CHARACTERISTICS
t
t
d(on)
A
= 125 C
d(off)
- 0.1
- 0.1
t
= 125 C
t
r
f
75 C
25 C
25 C
I
-25°C
D
75°C
25°C
- Drain Current - A
I
I
D
D
- 0.1
- Drain Current - A
- Drain Current - A
- 1
- 1
- 1
- 10
- 10
V
Pulsed
GS
V
V
R
= 4.5 V
DD
GS
G
= 10
= 10 V
= 4.0 V
Data Sheet G16254EJ1V0DS
- 100
- 100
- 10
0.01
30
20
10
10000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
0
0.1
- 0.01
1000
10
100
1
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
0.4
- 0.1
V
Pulsed
GS
T
= 0 V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
A
V
F(S-D)
= 125 C
- 0.1
DS
75 C
25 C
25°C
0.6
- Drain to Source Voltage - V
- Source to Drain Voltage - V
I
D
- Drain Current - A
- 1
- 1
0.8
- 10
- 10
V
Pulsed
1
GS
PA1818
V
f = 1.0 MHz
= 4.0 V
GS
C
C
C
= 0 V
iss
rss
oss
- 100
1.2
- 100
5