upa1818 Renesas Electronics Corporation., upa1818 Datasheet - Page 3

• Manufacturer Part Number: upa1818
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
120
100
-0.01
-100
80
60
40
20
-0.1
-10
0
-1
0
-0.1
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Single pulse
Mounted on ceramic
substrate of 5000 mm
R
(V
DS(on)
25
GS
V
= 4.5 V)
T
DS
Limited
A
I
D(DC)
- Ambient Temperature - C
- Drain to Source Voltage - V
50
1000
100
0.1
-1
10
1
1 m
I
75
D(pulse)
Single pulse
2
x 1.1 mm
100
DC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10 m
-10
125
A
= 25°C)
PW = 1 ms
100 ms
10 ms
150
Data Sheet G16254EJ1V0DS
100 m
-100
175
Mounted on FR-4 board
of 2500 mm
PW - Pulse Width - s
125 C/W
2
x 1.6 mm
1
Mounted on ceramic
substrate of 5000 mm
2.5
1.5
0.5
2
1
0
10
0
62.5°C/W
Mounted on FR-4 board
of 2500 mm
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
2
A
100
x 1.1 mm
50
- Ambient Temperature - C
2
x 1.6 mm
75
Mounted on ceramic
substrate of 5000 mm
1000
100
125
2
PA1818
x 1.1 mm
150
175
3