upa1817 Renesas Electronics Corporation., upa1817 Datasheet - Page 4

• Manufacturer Part Number: upa1817
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
- 50
- 40
- 30
- 20
- 10
- 1.4
- 1.2
- 0.8
- 0.6
- 0.4
30
25
20
15
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
0
- 1
-50
0
-50
0
I
Pulsed
D
Pulsed
= 6.0 A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
T
T
DS
ch
ch
V
- 0.2
0
GS
- Drain to Source Voltage - V
- Channel Temperature - C
- Channel Temperature - C
V
0
GS
= 4.5 V
= 2.5 V
50
- 0.4
50
4.0 V
4.5 V
100
V
I
D
2.5 V
- 0.6
4.0 V
DS
100
= 1.0 m A
= 10 V
150
Data Sheet G16253EJ1V0DS
- 0.8
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
- 0 .0 0 0 1
100
0.1
10
- 0 .0 0 1
1
30
25
20
15
10
- 0.01
- 0 .0 1
- 1 0 0
5
0
- 0 .1
- 1 0
0
- 1
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
- 0 .5
DS
= 10 V
- 2
V
P u ls e d
V
V
- 0.1
D S
GS
GS
- Gate to Source Voltage - V
I
=
D
- Gate to Source Voltage - V
- Drain Current - A
- 4
- 1
1 0 V
- 1
- 6
- 1 .5
T
- 8
A
- 10
= 125 C
I
Pulsed
D
= 6.0 A
75 C
25 C
25 C
T
- 10
PA1817
A
- 2
= 1 2 5 C
- 100
7 5 C
2 5 C
2 5 C
- 12
- 2 .5