upa1817 Renesas Electronics Corporation., upa1817 Datasheet - Page 3

• Manufacturer Part Number: upa1817
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
120
100
- 0.01
- 100
80
60
40
20
- 0.1
- 10
0
- 1
0
FORWARD BIAS SAFE OPERATING AREA
- 0.1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Single pulse
Mounted on ceram ic substrate of
5000 m m
R
(V
25
DS (on)
V
G S
T
DS
A
= 4.5 V)
- Ambient Temperature - C
- Drain to Source Voltage - V
50
I
Lim ited
2
1000
D(DC )
100
x 1.1 m m
0.1
10
1
- 1
1 m
75
Single pulse
D C
100
10 m
I
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
D(pulse)
A
- 10
125
= 25°C)
PW = 1 m s
Mounted on FR-4 board of
2500 mm
125 ° C/W
150
10 m s
100 m s
100 m
Data Sheet G16253EJ1V0DS
175
- 100
2
PW - Pulse Width - s
x 1.6 mm
Mounted on ceramic substrate of
5000 mm
62.5 C/W
1
2
x 1.1 mm
2.5
1.5
0.5
2
1
0
10
0
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
Mounted on ceramic substrate of
5000 mm
100
- Ambient Temperature - C
50
75
2
Mounted on FR-4 board
of 2500 mm
x 1.1 mm
1000
100
125
2
x 1.6 mm
150
PA1817
175
3