hat2203c Renesas Electronics Corporation., hat2203c Datasheet - Page 5

• Manufacturer Part Number: hat2203c
• Description: Silicon N Channel Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2203C
Main Characteristics
Rev.4.00 May.19, 2005 page 3 of 6
1600
1200
800
400
300
200
100
400
10
8
6
4
2
0
0
0
Test Conditions:
Drain to Source Saturation Voltage vs.
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Drain to Source Voltage
Gate to Source Voltage
Power vs. Temperature Derating
10 V
Typical Output Characteristics
4.5 V
3 V
Case Temperature
2
2
Gate to Source Voltage
50
4
4
100
6
6
Ta (°C)
V
150
Pulse Test
Pulse Test
GS
V
I
V
D
GS
8
8
DS
= 2 A
= 1 V
1.5 V
0.5 A
1 A
2.5 V
2 V
(V)
(V)
200
10
10
-0.03
-0.01
1000
-100
-0.3
-0.1
100
-30
-10
10
10
-3
-1
-0.01
Static Drain to Source on State Resistance
8
6
4
2
0
0.1
Ta = 25°C,1 shot Pulse
When using the FR4 board.
V
Pulse Test
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
V
Operation in
this area is
limited by R
Drain to Source Voltage
DS
Gate to Source Voltage
Typical Transfer Characteristics
GS
Maximum Safe Operation Area
= 10 V
= 2.5V
1
-0.1 -0.3
Drain Current
−25°C
vs. Drain Current
1
DS(on)
2
-1
25°C
4.5V
Tc = 75 °C
3
-3
I
10
D
Pulse Test
-10 -30 -100
Ta = 25 °C
(A)
V
V
4
GS
DS
(V)
(V)
100
5