hat2203c Renesas Electronics Corporation., hat2203c Datasheet - Page 3

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hat2203c

Manufacturer Part Number
hat2203c
Description
Silicon N Channel Mos Fet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
HAT2203C
Silicon N Channel MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body - Drain diode reverse Drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.4.00 May.19, 2005 page 1 of 6
Low on-resistance
R
Low drive current
High density mounting
2.5 V gate drive device
DS(on)
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
= 69 m typ.(at V
10 s, duty cycle
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
Item
GS
= 4.5 V)
Index band
1%
6
5
4
1
2
I
D (pulse)
Symbol
Pch
3
V
V
Tstg
Tch
I
GSS
I
DSS
DR
D
Note2
Note1
6
G
2
D
3
D
4
D
S
1
5
D
–55 to +150
Ratings
±12
830
150
20
2
8
2
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
REJ03G0447-0400
Unit
May 19.2005
mW
V
V
A
A
A
C
C
(Ta = 25°C)
Rev.4.00

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