hat2044r-el-e Renesas Electronics Corporation., hat2044r-el-e Datasheet - Page 4

• Manufacturer Part Number: hat2044r-el-e
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2044R
Rev.3.00 Sep 07, 2005 page 4 of 6
100
Static Drain to Source on State Resistance
20
16
12
50
20
10
50
40
30
20
10
8
4
0
–40
0
0.1 0.2
0
V
Reverse Drain Current I
Pulse Test
GS
I
V
4.5 V
Case Temperature
Dynamic Input Characteristics
D
DS
Body-Drain Diode Reverse
= 15 A
= 2.5 V
Gate Charge
20
0
4 V
0.5
vs. Temperature
Recovery Time
V
DD
I
40
V
40
D
= 5 V
DD
1
10 V
20 V
= 2 A, 5 A, 10 A
di / dt = 20 A / µs
V
= 20 V
GS
2 A, 5 A, 10 A
10 V
2
5 V
80
60
= 0, Ta = 25°C
Qg (nc)
2 A, 5 A, 10 A
Tc
5
V
DR
120
GS
80
(°C)
10
(A)
100
160
20
10
8
6
4
2
0
10000
1000
3000
1000
500
200
100
100
100
300
0.3
0.1
50
20
10
30
10
30
10
3
1
0.1
0.1
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
0.2
t r
0.3
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
10
Tc = –25°C
Drain Current
Drain Current I
0.5
25°C
Drain Current
1
20
V
Rg = 50 Ω, duty ≤ 1 %
1
GS
t d(off)
Coss
Crss
Ciss
t f
3
= 4 V, V
75°C
2
30
t d(on)
I
10
D
D
V
Pulse Test
DS
V
f = 1 MHz
5
DS
(A)
(A)
GS
= 10 V
40
= 10 V
DS
30
= 0
10
(V)
100
20
50