hat2044r-el-e Renesas Electronics Corporation., hat2044r-el-e Datasheet - Page 3

• Manufacturer Part Number: hat2044r-el-e
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2044R
Main Characteristics
Rev.3.00 Sep 07, 2005 page 3 of 6
0.20
0.16
0.12
0.08
0.04
4.0
3.0
2.0
1.0
50
40
30
20
10
0
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Test Condition:
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
Gate to Source Voltage
2
2
10 V
50
2 V
4 V
4
4
100
6
6
V
150
Pulse Test
GS
Pulse Test
Ta (°C)
V
V
I
D
8
= 1.5 V
8
GS
DS
= 10 A
5 A
2 A
(V)
(V)
200
10
10
0.01
500
100
100
0.1
Static Drain to Source on State Resistance
10
50
40
30
20
10
50
20
10
1
0
5
2
1
0.1
0.1 0.2 0.5
0
Drain to Source Voltage
Gate to Source Voltage
Ta = 25°C
1 shot Pulse
Operation in
this area is
limited by R
Note 4:
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.3
Drain Current
1
vs. Drain Current
V
1
1
DS (on)
GS
–25°C
2
25°C
2
= 4 V
Tc = 75°C
3
5
3
2.5 V
I
10
10 20
D
V
Pulse Test
DS
4.5 V
10 µs
(A)
V
V
= 10 V
4
30
GS
DS
50
(V)
(V)
100
100
5