hat2043r Renesas Electronics Corporation., hat2043r Datasheet - Page 4

• Manufacturer Part Number: hat2043r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2043R
Rev.6.00 Sep 07, 2005 page 4 of 7
0.10
0.08
0.06
0.04
0.02
500
200
100
Static Drain to Source on State Resistance
50
20
10
50
40
30
20
10
0
–40
5
0
0.2
0
V
I
Reverse Drain Current I
Pulse Test
D
Case Temperature
Dynamic Input Characteristics
DS
= 8 A
V
Body-Drain Diode Reverse
GS
Gate Charge
0.5
10
10 V
0
= 4 V
V
vs. Temperature
DD
Recovery Time
1
= 5 V
40
10 V
20 V
20
V
I
D
di / dt = 20 A / µs
V
DD
2
GS
= 1 A, 2 A, 5 A
1 A, 2 A, 5 A
= 20 V
80
30
= 0, Ta = 25°C
10 V
Qg (nc)
5 V
Tc
5
DR
120
V
40
GS
(°C)
10
(A)
160
50
20
20
16
12
8
4
0
10000
3000
1000
1000
100
500
200
100
300
0.5
50
20
10
30
10
50
20
10
5
2
1
0.2
0.2
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
Switching Characteristics
0.5
0.5
Typical Capacitance vs.
Drain to Source Voltage
10
Drain Current
Drain Current I
25°C
Drain Current
1
1
20
t d(on)
V
PW = 5 µs, duty ≤ 1 %
Tc = –25°C
GS
Ciss
Coss
Crss
2
2
75°C
t r
= 4 V, V
30
I
D
D
V
Pulse Test
5
5
DS
V
f = 1 MHz
DD
(A)
(A)
t d(off)
GS
= 10 V
40
DS
= 10 V
10
10
= 0
(V)
t f
20
20
50