hat2043r Renesas Electronics Corporation., hat2043r Datasheet - Page 3

• Manufacturer Part Number: hat2043r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2043R
Main Characteristics
Rev.6.00 Sep 07, 2005 page 3 of 7
0.25
0.20
0.15
0.10
0.05
4.0
3.0
2.0
1.0
20
16
12
0
8
4
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Test Condition:
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
10 V
Gate to Source Voltage
2
2
4 V
50
6 V
4
4
100
6
6
150
Pulse Test
Pulse Test
V
Ta (°C)
I
V
V
D
GS
8
8
GS
DS
= 5 A
1 A
2 A
3.5 V
2.5 V
= 2 V
(V)
(V)
200
10
10
0.005
0.03
0.01
0.05
0.02
0.01
100
0.3
0.1
Static Drain to Source on State Resistance
0.5
0.2
0.1
30
10
20
16
12
3
1
8
4
0
0.1
0.2
0
Drain to Source Voltage
Gate to Source Voltage
Ta = 25°C
1 shot Pulse
Operation in
this area is
limited by R
Pulse Test
V
Pulse Test
Note 5:
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Tc = 75°C
0.3
= 10 V
0.5
Drain Current
1
vs. Drain Current
1
DS (on)
1
2
3
2
V
GS
–25°C
25°C
3
= 4 V
10 V
I
10
D
5
(A)
V
V
4
30
GS
DS
10
10 µs
(V)
(V)
100
20
5