hat2025r-el-e Renesas Electronics Corporation., hat2025r-el-e Datasheet - Page 4

• Manufacturer Part Number: hat2025r-el-e
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2025R
Rev.5.00 Sep 07, 2005 page 4 of 6
100
500
200
100
Static Drain to Source on State Resistance
80
60
40
20
50
20
10
50
40
30
20
10
0
–40
5
0
0.1
0
I
Reverse Drain Current I
Pulse Test
V
D
Case Temperature
V
Dynamic Input Characteristics
GS
10 V
= 8 A
DS
0.2
Body-Drain Diode Reverse
Gate Charge
= 4 V
0
4
4.5 V
vs. Temperature
Recovery Time
0.5
40
V
8
DD
5, 2, 1 A
di / dt = 20 A / µs
V
V
= 5 V
1
GS
10 V
25 V
I
DD
D
80
12
= 5 A
= 0, Ta = 25°C
= 25 V
Qg (nc)
2
10 V
Tc
5 V
5 A
DR
120
16
2, 1 A
V
(°C)
GS
2, 1 A
5
(A)
160
20
10
20
16
12
8
4
0
10000
1000
3000
1000
500
200
100
100
300
0.5
50
20
10
50
20
10
30
10
5
2
1
0.1
0.2
0
Drain to Source Voltage V
V
PW = 3 µs, duty ≤ 1 %
Forward Transfer Admittance vs.
GS
0.2
= 4 V, V
Switching Characteristics
0.5
Typical Capacitance vs.
Drain to Source Voltage
10
Drain Current
Drain Current I
0.5
Drain Current
Tc = –25°C
1
DD
20
25°C
= 10 V
Coss
Ciss
Crss
1
2
t r
t f
t d(on)
30
75°C
2
I
D
D
V
Pulse Test
5
DS
V
f = 1 MHz
(A)
(A)
GS
= 10 V
40
DS
t d(off)
10
= 0
5
(V)
10
20
50