hat2025r-el-e Renesas Electronics Corporation., hat2025r-el-e Datasheet - Page 3

• Manufacturer Part Number: hat2025r-el-e
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2025R
Main Characteristics
Rev.5.00 Sep 07, 2005 page 3 of 6
0.20
0.16
0.12
0.08
0.04
4.0
3.0
2.0
1.0
20
16
12
0
8
4
0
0
Drain to Source Saturation Voltage vs.
0
0
0
10 V
Drain to Source Voltage
Gate to Source Voltage
Test Condition:
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
6 V
Gate to Source Voltage
2
2
50
5 V
4.5 V
4 V
4
4
100
6
6
V
GS
I
150
Pulse Test
Pulse Test
D
Ta (°C)
V
= 2.5 V
V
= 5 A
2 A
1 A
8
8
GS
DS
3.5 V
3 V
(V)
(V)
200
10
10
0.03
0.01
100
500
200
100
0.3
0.1
Static Drain to Source on State Resistance
30
10
50
40
30
20
10
50
20
10
3
1
0
5
0.1
0.2
0
Drain to Source Voltage
Gate to Source Voltage
Ta = 25°C
1 shot Pulse
Operation in
this area is
limited by R
Pulse Test
Note 4:
Typical Transfer Characteristics
Maximum Safe Operation Area
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.3
0.5
Drain Current
2
–25°C
vs. Drain Current
1
1
DS (on)
4
V
3
2
GS
= 10 V
6
4.5 V
Tc = 75°C
4 V
I
10
D
25°C
V
Pulse Test
5
DS
(A)
V
V
= 10 V
8
30
GS
DS
10
10 µs
(V)
(V)
100
10
20