hat2033rj Renesas Electronics Corporation., hat2033rj Datasheet - Page 5

• Manufacturer Part Number: hat2033rj
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2033R, HAT2033RJ
Rev.4.00 Sep 07, 2005 page 5 of 7
Vin
15 V
20
16
12
8
4
0
0
Source to Drain Voltage
10 V
0.0001
Avalanche Test Circuit
0.001
Reverse Drain Current vs.
0.01
V
Monitor
0.4
0.1
Source to Drain Voltage
10
50 Ω
DS
1
10 µ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
5 V
Rg
D = 1
0.5
0.8
100 µ
V
1.2
GS
D.U.T
= 0, –5 V
I
Monitor
AP
Pulse Test
1 m
L
V
1.6
SD
(V)
10 m
2.0
V
Pulse Width PW (S)
DD
100 m
0
1
θch – f (t) = γ s (t) • θch – f
θch – f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
V
P
DD
DM
E
AR
5
4
3
2
1
0
25
10
=
I
Channel Temperature Tch (°C)
AP
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Waveform
PW
1
2
T
50
100
• L • I
I
D
AP
75
D =
1000
2
•
PW
V
100
T
DSS
I
V
L = 100 µH
duty < 0.1 %
Rg ≥ 50 Ω
AP
10000
V
DD
DSS
= 7 A
– V
= 25 V
125
V
DD
DS
V
(BR)DSS
150