hat2033rj Renesas Electronics Corporation., hat2033rj Datasheet - Page 2

• Manufacturer Part Number: hat2033rj
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2033R, HAT2033RJ
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain
current
Zero gate voltage drain
current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Rev.4.00 Sep 07, 2005 page 2 of 7
2. When using the glass epoxy board (FR4 40
3. Value at Tch = 25 C, Rg
4. Pulse test
10 s, duty cycle
Item
Item
HAT2033R
HAT2033RJ
HAT2033R
HAT2033RJ
HAT2033R
HAT2033RJ
HAT2033R
HAT2033RJ
1%
50
V
V
Symbol
R
R
V
Coss
(BR) DSS
(BR) GSS
Crss
Ciss
t
t
I
GS (off)
I
I
I
I
DS (on)
DS (on)
|y
V
d (on)
d (off)
GSS
DSS
DSS
DSS
DSS
t
t
t
DF
rr
fs
r
f
|
I
D (pulse)
Pch
E
Symbol
I
40
AP
AR
V
V
Tstg
Min
Tch
1.2
6.5
60
I
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
DSS
GSS
DR
20
Note 4
D
Note 4
Note 2
Note 1
1.6 mm), PW
0.03
0.04
0.82
Typ
740
370
130
140
10
13
55
95
45
—
—
—
—
—
—
—
—
0.038
0.053
Max
1.07
0.1
2.2
10
—
—
—
—
—
—
—
—
—
—
—
—
10
1
10 s
–55 to +150
Value
150
4.2
2.5
Unit
60
56
—
—
20
7
7
7
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
A
A
A
I
I
V
V
V
Ta = 125 C
V
I
I
I
V
V
f = 1 MHz
V
V
I
I
di
D
G
D
D
D
F
F
GS
DS
DS
DS
DS
GS
GS
DD
F
= 7 A, V
= 7 A, V
= 10 mA, V
= 4 A, V
= 4 A, V
= 4 A, V
= 100 A, V
/dt = 50 A/ s
= 60 V, V
= 48 V, V
= 10 V, I
= 10 V
= 16 V, V
= 0
= 10 V, I
Test Conditions
30 V
GS
GS
GS
GS
DS
D
D
= 0
= 0
= 10 V
= 10 V
= 4 V
GS
GS
GS
= 1 mA
= 4 A,
DS
DS
Unit
= 0
= 0
= 0
mJ
(Ta = 25 C)
(Ta = 25 C)
Note 4
—
—
W
V
V
A
A
A
A
= 0
C
C
= 0
Note 4
Note 4
Note 4