hat2172ns Renesas Electronics Corporation., hat2172ns Datasheet - Page 4

• Manufacturer Part Number: hat2172ns
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2172N
REJ03G1683-0100 Rev.1.00 May 28, 2008
Page 4 of 7
100
Static Drain to Source on State Resistance
20
50
10
20
15
10
50
40
30
20
10
–25
0.1
5
0
0
V
Pulse Test
V GS = 7 V
I
Reverse Drain Current I
D
DS
Dynamic Input Characteristics
Case Temperature Tc (°C)
= 30 A
10 V
0.3
Body-Drain Diode Reverse
0
Gate Charge Qg (nc)
8
25
vs. Temperature
Recovery Time
1
V
5 A, 10 A, 20 A
DD
16
50
= 25 V
V
I
3
di/dt = 100 A/µs
V
DD
D
10 V
GS
5 V
= 20 A
75
= 25 V
24
= 0, Ta = 25°C
10 V
10
5 V
100 125 150
5 A, 10 A
DR
32
30
(A)
V
GS
100
40
20
16
12
8
4
0
10000
3000
1000
1000
300
100
100
300
100
0.3
0.1
30
10
30
10
10
30
3
1
3
1
0.1
0.1
0
Drain to Source Voltage V
V
f = 1 MHz
Forward Transfer Admittance vs.
GS
0.3
0.3
= 0
Switching Characteristics
5
Typical Capacitance vs.
Drain to Source Voltage
Tc = –25°C
Drain Current I
Drain Current I
10
1
Drain Current
1
V
Rg = 4.7
GS
15
3
3
= 10 V, V
t d(off)
25°C
Ω
20
10
10
V
Pulse Test
D
, duty ≤ 1 %
D
DS
(A)
DS
(A)
= 10 V
30
DS
30
25
= 10 V
75°C
t r
t d(on)
Coss
Crss
Ciss
t f
(V)
100
100
30