hat2172ns Renesas Electronics Corporation., hat2172ns Datasheet - Page 3

• Manufacturer Part Number: hat2172ns
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2172N
Main Characteristics
REJ03G1683-0100 Rev.1.00 May 28, 2008
Page 3 of 7
200
150
100
40
30
20
10
50
40
30
20
10
50
0
0
Drain to Source Saturation Voltage vs.
0
Drain to Source Voltage V
Gate to Source Voltage V
Power vs. Temperature Derating
Typical Output Characteristics
10 V
Case Temperature Tc (°C)
4.4 V
Gate to Source Voltage
2
4
50
4
8
100
4.0 V
12
6
Pulse Test
Pulse Test
150
I
16
D
8
DS
GS
= 20 A
3.8 V
3.6 V
3.4 V
10 A
(V)
(V)
5 A
200
10
20
0.01
100
500
100
Static Drain to Source on State Resistance
0.1
20
10
50
10
50
40
30
20
10
2
1
1
5
0
0.1
1
Drain to Source Voltage V
Gate to Source Voltage V
Operation in
this area is
limited by R
Ta = 25°C
1 shot Pulse
V
Pulse Test
V
Typical Transfer Characteristics
Tc = 75°C
Maximum Safe Operation Area
DS
GS
0.3
0.3
= 10 V
= 7 V
Drain Current
2
10 V
vs. Drain Current
10
1
DS(on)
4
25°C
–25°C
3
3
6
100
I
10
D
Pulse Test
(A)
GS
8
30
30
DS
(V)
(V)
1000
100
10