hat2166h05 Renesas Electronics Corporation., hat2166h05 Datasheet - Page 5

• Manufacturer Part Number: hat2166h05
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2166H
Rev.6.00 Sep 20, 2005 page 5 of 7
Vin
15 V
50
40
30
20
10
0
Source to Drain Voltage
Reverse Drain Current vs.
0.4
10 V
5 V
Source to Drain Voltage
Avalanche Test Circuit
0.03
0.01
V
Monitor
0.3
0.1
50
DS
3
1
10
0.8
Rg
D = 1
0.5
V
GS
1.2
= 0
Normalized Transient Thermal Impedance vs. Pulse Width
100
Pulse Test
D. U. T
I
Monitor
V
1.6
AP
SD
L
(V)
2.0
1 m
V
DD
Pulse Width PW (s)
10 m
0
V
100
80
60
40
20
DD
0
P
25
DM
ch - c(t) = s (t)
ch - c = 5.0 C/ W, Tc = 25 C
Channel Temperature Tch ( C)
Maximum Avalanche Energy vs.
100 m
Channel Temperature Derating
E
AR
I
50
AP
=
Avalanche Waveform
1
2
PW
T
I
D
L I
75
AP
1
ch - c
2
Tc = 25 C
I
V
duty < 0.1 %
Rg
100
AP
D =
DD
V
= 25 A
= 15 V
DSS
50
PW
V
T
DSS
125
– V
10
DD
V
DS
150
V
(BR)DSS