hat2166h05 Renesas Electronics Corporation., hat2166h05 Datasheet - Page 3

• Manufacturer Part Number: hat2166h05
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2166H
Main Characteristics
Rev.6.00 Sep 20, 2005 page 3 of 7
250
200
150
100
40
30
20
10
50
40
30
20
10
50
0
0
Drain to Source Saturation Voltage vs.
0
Drain to Source Voltage
Gate to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
4.5 V
10 V
2
Gate to Source Voltage
4
50
Pulse Test
4
8
100
12
6
Pulse Test
I
D
150
Tc ( C)
= 50 A
V
V
16
8
GS
DS
2.7 V
2.6 V
2.5 V
2.4 V
2.3 V
10 A
20 A
(V)
(V)
200
20
10
0.01
500
100
0.1
Static Drain to Source on State Resistance
10
50
40
30
20
10
10
1
5
2
1
0
0.1
1
Drain to Source Voltage
Gate to Source Voltage
Pulse Test
Operation in
this area is
limited by R
Tc = 25 C
1 shot Pulse
V
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
Tc = 75 C
0.3
3
= 10 V
1
Drain Current
V
GS
vs. Drain Current
10
= 4.5 V
1
DS(on)
2
10 V
30
3
25 C
-25 C
3
100
10
I
D
(A)
V
V
300
4
30
GS
DS
(V)
(V)
1000
100
5