hat2167n Renesas Electronics Corporation., hat2167n Datasheet - Page 5

• Manufacturer Part Number: hat2167n
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2167N
REJ03G1681-0200 Rev.2.00 May 27, 2008
Page 5 of 6
Vin
15 V
50
40
30
20
10
0
Source to Drain Voltage V
Vin
10 V
Vin Monitor
Rg
Reverse Drain Current vs.
Switching Time Test Circuit
0.4
Source to Drain Voltage
5 V
10 V
Avalanche Test Circuit
V
Monitor
50
DS
0.8
Rg
V
D.U.T.
GS
1.2
= 0
D. U. T
Pulse Test
I
Monitor
R L
AP
V
= 10 V
1.6
L
DS
SD
Vout
Monitor
(V)
2.0
V
DD
0
50
40
30
20
10
V
t d(on)
0
DD
25
Vout
Vin
Channel Temperature Tch (°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
E
AR
50
I
Switching Time Waveform
10%
AP
Avalanche Waveform
=
10%
90%
1
2
I
t r
D
75
L I
AP
100
I
V
duty < 0.1 %
Rg
t d(off)
2
AP
DD
90%
= 20 A
= 15 V
V
50
DSS
125
V
90%
DSS
- V
V
DS
DD
10%
V
t f
150
(BR)DSS