hat2167n Renesas Electronics Corporation., hat2167n Datasheet - Page 3

• Manufacturer Part Number: hat2167n
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2167N
Main Characteristics
REJ03G1681-0200 Rev.2.00 May 27, 2008
Page 3 of 6
500
400
300
200
100
40
30
20
10
50
40
30
20
10
0
Drain to Source Saturation Voltage vs.
0
0
Drain to Source Voltage V
Gate to Source Voltage V
10 V
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature Tc ( C)
4.5 V
Gate to Source Voltage
4
2
50
3.0 V
8
4
100
12
6
Pulse Test
Pulse Test
150
I
D
16
= 50 A
8
DS
GS
20 A
2.6 V
2.4 V
2.8 V
10 A
(V)
(V)
200
20
10
0.01
500
100
Static Drain to Source on State Resistance
0.1
10
10
1
5
2
1
0.1
0
1
Drain to Source Voltage V
Operation in
this area is
limited by R
Gate to Source Voltage V
Ta = 25 C
1 shot Pulse
V
Pulse Test
V
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
GS
0.3
0.3
Tc = 75 C
= 10 V
= 4.5 V
1
Drain Current I
10 V
vs. Drain Current
10
1
DS(on)
2
3
3
25 C
-25 C
3
100
10
D
Pulse Test
(A)
10 s
4
GS
DS
30
30
(V)
(V)
1000
100
5