km29u128t Samsung Semiconductor, Inc., km29u128t Datasheet - Page 7

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km29u128t

Manufacturer Part Number
km29u128t
Description
16m X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KM29U128T
Manufacturer:
SAMSUNG
Quantity:
11 350
AC TEST CONDITION
(KM29U128T:T
KM29U128T, KM29U128IT
VALID BLOCK
NOTE :
1. The KM29U128 may include invalid blocks. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these invalid
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Program/Erase Characteristics
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (3.0V +/-10%)
Output Load (3.3V +/-10%)
Valid Block Number
Input/Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles
in the Same Page
Block Erase Time
blocks for program and erase. During its lifetime of 10 years and/or 1million program/erase cycles,the minimum number of valid blocks are guaran-
teed though its initial number could be reduced. (Refer to the attached technical notes)
CLE
H
H
L
L
L
L
L
X
X
X
X
2. WP should be biased to CMOS high or CMOS low for standby.
3. When SE is high, spare area is deselected.
Parameter
ALE
X
Item
H
H
L
L
L
L
L
X
X
X
(1)
A
=0 to 70 C, KM29U128IT:T
IL
Parameter
or V
(
T
IH.
Parameter
A
CE
=25 C, V
X
X
X
H
L
L
L
L
L
L
L
CC
WE
H
H
X
X
X
X
=3.3V, f=1.0MHz)
Symbol
Symbol
N
C
C
I/O
VB
IN
Spare Array
Main Array
RE
H
H
H
H
H
H
X
X
X
X
A
=-40 to 85 C
Test Condition
0V/V
L/H
L/H
L/H
L/H
SE
X
X
X
X
X
X
V
V
CC
(3)
(3)
(3)
(3)
1004
IN
Min
IL
Symbol
=0V
(2)
=0V
t
t
PROG
Nop
BERS
7
,
V
0V/V
CC
WP
X
X
H
H
H
X
X
H
H
L
=2.7V~3.6V unless otherwise noted)
CC
(2)
1 TTL GATE and CL=100pF
Data Input
Sequential Read & Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
1 TTL GATE and CL=50pF
Read Mode
Write Mode
Min
Typ.
-
-
-
-
Min
-
-
-
0.4V to 2.4V
Value
1.5V
5ns
Command Input
Command Input
Address Input(3clock)
Address Input(3clock)
Typ
200
2
-
-
FLASH MEMORY
1024
Max
Max
Mode
10
10
Max
500
2
3
3
Blocks
Unit
Unit
pF
pF
cycles
cycles
Unit
ms
s

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