ech8315 Sanyo Semiconductor Corporation, ech8315 Datasheet

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ech8315

Manufacturer Part Number
ech8315
Description
P-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Ordering number : ENA1387
ECH8315
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Marking : JS
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Low ON-resistance.
4V drive.
Halogen free compliance.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer ' s
products or equipment.
Parameter
Parameter
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Symbol
Symbol
www.semiconductor-sanyo.com/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
I D =--1mA, V GS =0V
V DS =--30V, V GS =0V
V GS =±16V, V DS =0V
V DS =--10V, I D =--1mA
V DS =--10V, I D =--3.5A
I D =--3.5A, V GS =--10V
I D =--2A, V GS =--4.5V
I D =--2A, V GS =--4V
ECH8315
Conditions
Conditions
2
×0.8mm)
D2408PE MS IM TC-00001772
DATA SHEET
min
--1.2
--30
5
Ratings
typ
Ratings
8.4
19
31
35
Continued on next page.
--55 to +150
max
--7.5
--2.6
--30
±20
--40
±10
150
1.5
--1
25
44
49
No. A1387-1/4
Unit
Unit
°C
°C
μA
μA
W
A
A
S
V
V
V
V

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ech8315 Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. ECH8315 SANYO Semiconductors P-Channel Silicon MOSFET General-Purpose Switching Device ...

Page 2

... --10V --3. =4.3Ω D PW=10μs D.C.≤1% G ECH8315 P.G 50Ω S ECH8315 Symbol Conditions Ciss V DS =--10V, f=1MHz Coss V DS =--10V, f=1MHz Crss V DS =--10V, f=1MHz t d (on) See specifi ed Test Circuit See specifi ed Test Circuit (off) See specifi ed Test Circuit. ...

Page 3

... Drain Current Time -- 100 (on --0.1 --1.0 Drain Current ECH8315 -- --10V --9 --8 --7 --6 --5 --4 --3 --2 --1 0 --0.8 --0.9 --1.0 0 --0.5 IT14298 70 Ta=25° --12 --14 --16 --60 --40 --20 IT14300 --10V ...

Page 4

... Ambient Temperature °C Note on usage : Since the ECH8315 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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