ech8310 Sanyo Semiconductor Corporation, ech8310 Datasheet - Page 2

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ech8310

Manufacturer Part Number
ech8310
Description
P-channel Silicon Mosfet General-purpose Switching Device Applications
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Continued from preceding page.
Package Dimensions
unit : mm (typ)
7011A-002
Switching Time Test Circuit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
--10V
P.G
0V
PW=10μs
D.C.≤1%
V IN
1
8
0.65
Bot t om View
Parameter
Top View
V IN
2.9
G
50Ω
5
4
0.3
V DD = --15V
D
S
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
0.15
I D = --4.5A
R L =3.3Ω
ECH8310
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
0 t o 0.02
Symbol
V OUT
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--15V, V GS =--10V, I D =--9A
V DS =--15V, V GS =--10V, I D =--9A
V DS =--15V, V GS =--10V, I D =--9A
I S =--9A, V GS =0V
ECH8310
Conditions
Electrical Connection
8
1
7
2
6
3
min
5
4
Ratings
typ
1400
--0.8
350
250
134
10
45
87
28
4
6
Top view
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
max
--1.2
No. A1430-2/4
Unit
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V

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