ech8301 Sanyo Semiconductor Corporation, ech8301 Datasheet

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ech8301

Manufacturer Part Number
ech8301
Description
P-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ech8301-TL-E
Manufacturer:
INFINEON
Quantity:
10 000
Ordering number : ENN8367
ECH8301
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : JA
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Low ON-resistance.
Ultrahigh-speed switcing.
2.5V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V GS (off)
Symbol
Symbol
V GSS
V DSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
t r
t f
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
I D =--1mA, V GS =0V
V DS =- -20V, V GS =0V
V GS = 8V, V DS =0V
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =- -4A
I D =--4A, V GS =- -4V
I D =--2A, V GS =- -2.5V
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
ECH8301
Conditions
Conditions
2
0.8mm)
62005PA MS IM TA-100253
min
--0.4
--20
11
Ratings
typ
1700
Ratings
330
250
120
230
150
16
18
26
29
Continued on next page.
--55 to +150
max
150
--1.3
--20
--40
1.6
10
--8
10
24
37
--1
No.8367-1/4
Unit
Unit
m
m
pF
pF
pF
ns
ns
ns
ns
W
V
V
A
A
V
V
S
C
C
A
A

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ech8301 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN ECH8301 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... P ECH8301 Symbol Conditions =--10V -4V -8A Qgs V DS =--10V -4V -8A Qgd V DS =--10V -4V - =--8A =0V Electrical Connection 0.15 V OUT ECH8301 Ratings min typ max 21 2.8 7.5 --0. Source 2 : Source 3 : Source 4 : Gate 5 : Drain ...

Page 3

... Drain Current Ciss, Coss, Crss -- 1000 100 0 --2 --4 --6 --8 --10 --12 Drain-to-Source Voltage ECH8301 -- --10V --9 --8 --7 --6 --5 --4 --3 -- --1.0V --1 0 --0.8 --0.9 --1.0 0 IT05138 50 Ta= --8 --10 ...

Page 4

... Ambient Temperature Note on usage : Since the ECH8301 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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