mch6629 Sanyo Semiconductor Corporation, mch6629 Datasheet
mch6629
Related parts for mch6629
mch6629 Summary of contents
Page 1
... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN MCH6629 SANYO Semiconductors P-Channel Silicon MOSFET General-Purpose Switching Device ...
Page 2
... -- --0. =75Ω D PW=10µs D.C.≤1% G MCH6629 P.G 50Ω S MCH6629 Symbol Conditions t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit See specified Test Circuit =--10V -4V -0.4A Qgs V DS =--10V -4V -0.4A Qgd V DS =--10V -4V ...
Page 3
... Gate-to-Source Voltage fs --0.001 --0.01 --0.1 Drain Current Time -- --0.1 Drain Current MCH6629 --0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0. --0.8 --0.9 --1.0 IT07653 4.0 Ta=25 °C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --7 --8 --9 --10 --60 IT09247 --1 --10V --0 ...
Page 4
... --1.6A 2 --1 --0. --0.1 Operation in this 7 area is limited (on Ta=25° Single pulse ✕0.8mm) 1unit 2 Mounted on a ceramic board (900mm --0. --0.1 --1.0 Drain-to-Source Voltage MCH6629 1 0.7 0.8 0.9 --0.01 IT09251 2. --1.0 --0.01 IT08165 1.0 PW ≤10µs 0.8 0.6 0.4 0 ...
Page 5
... Note on usage : Since the MCH6629 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...