mch6627 Sanyo Semiconductor Corporation, mch6627 Datasheet
mch6627
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mch6627 Summary of contents
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... Ordering number : ENN8000 MCH6627 Features The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and • high-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. • 4V drive. • Specifications Absolute Maximum Ratings at Ta=25 C Parameter Drain-to-Source Voltage Gate-to-Source Voltage ...
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... Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view --15V --500mA = OUT PW= MCH6627 P Unit 1 -- --2 550 --1.5 V No.8000-2/6 ...
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... Drain Current Time -- (on 1 0.1 Drain Current MCH6627 [Nch] 1 =10V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.8 1.0 0 IT03294 [Nch] 800 Ta=25 C 700 600 500 400 300 200 100 --60 --40 IT03296 [Nch] ...
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... Gate-to-Source Voltage 1 0 --0.01 --0.1 Drain Current MCH6627 [Nch 1 Operation in this 3 area is limited (on Ta= Single pulse Mounted on a ceramic board (900mm 0.01 2.0 2.5 2 0.1 IT03302 [Pch] --1 ...
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... Drain Current -- --10V --1.0A --8 --6 --4 -- 0.5 1.0 1.5 2.0 Total Gate Charge 1.0 0.8 0.6 0.4 0 100 Ambient Temperature MCH6627 [Pch] 100 --1.0 IT03316 [Pch --1 Operation in this area is limited (on). --0 ...
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... Note on usage : Since the MCH6627 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...