tsm7104d Taiwan Semiconductor Company, Ltd. (TSC), tsm7104d Datasheet - Page 2

• Manufacturer Part Number: tsm7104d
• Description: 20v Dual P-channel Enhancement Mode Mosfet
• Manufacturer: Taiwan Semiconductor Company, Ltd. (TSC)

Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM7104D
Electrical Characteristics
Rate I
Static
Drain-Source Breakdown Voltage
Drain-Source On-State
Resistance
Drain-Source On-State
Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
D
= - 2.3A, (Ta = 25
Parameter
o
C unless otherwise noted)
V
V
V
V
V
V
V
V
V
V
I
R
V
f = 1.0MHz
I
D
S
GS
GS
GS
DS
DS
GS
DS
DS
GS
DD
DS
G
= - 1A, V
= - 1.6A, V
= 6
= V
= - 16V, V
= - 5V, I
= - 6V, I
= - 6V, R
= - 6V, V
= 0V, I
= - 4.5V, I
= - 2.5V, I
= - 4.5V
= ± 8V, V
Conditions
GS
, I
D
GEN
D
D
D
= - 250uA
GS
GS
2-3
= - 250uA
L
= - 2.3A
= - 2.3A,
DS
D
D
GS
= 6 ,
= - 4.5V,
= -2.3A
= -2.0A
= 0V
= 0V,
= 0V
= 0V
Symbol
R
R
V
BV
I
DS(ON)
DS(ON)
GS(TH)
I
t
t
C
Q
C
C
V
GSS
Q
DSS
g
d(on)
d(off)
Q
I
t
t
DSS
oss
SD
fs
rss
S
iss
gs
gd
r
f
g
- 0.45
Min
- 20
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
2003/12 rev. A
- 0.8
Typ
447
127
120
5.4
0.8
1.1
6.5
19
95
65
80
90
--
5
--
--
--
--
± 100
- 1.6
- 1.2
Max
- 1.0
110
130
190
10
25
60
80
--
--
--
--
--
--
--
--
Unit
m
uA
nA
nC
nS
pF
V
V
S
A
V