tsm5ns50 Taiwan Semiconductor Company, Ltd. (TSC), tsm5ns50 Datasheet - Page 2

• Manufacturer Part Number: tsm5ns50
• Description: 500v N-channel Power Mosfet
• Manufacturer: Taiwan Semiconductor Company, Ltd. (TSC)

Electrical Specifications
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c.
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-to-Drain Reverse Recovery
Time
Switching time is essentially independent of operating temperature.
b
c
a
V
V
V
V
V
I
V
V
V
f = 1.0MHz
V
V
I
di/dt = 100A/uS
S
S
GS
DS
GS
DS
GS
DS
GS
DS
GS
DS
= 4.4A, V
= 4.4A,
= V
= 500V, V
= 520V, I
= 25V, V
= 350V, R
= 0V, I
= 10V, I
= 10V
= 10V, I
= ±20V, V
Conditions
GS
, I
D
D
GS
D
D
= 250A
GS
= 250A
D
= 4.0A
= 4.4A,
GS
= 0V
G
DS
= 4.4A,
= 0V,
= 25
2/6
= 0V
= 0V
500V N-Channel Power MOSFET
Symbol
R
V
BV
t
t
I
C
GS(TH)
I
DS(ON)
V
C
C
Q
Q
d(on)
d(off)
GSS
DSS
Q
t
t
t
oss
SD
iss
rss
DSS
gd
r
r
gs
f
g
Min
500
--
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--
--
--
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--
--
--
--
--
--
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2
Typ
TSM5NS50
400
120
250
0.7
1.0
13
40
50
10
--
--
--
--
3
6
6
3
Max
±100
1.0
0.8
1.5
00
--
4
--
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--
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Version: A07
Unit
nA
A
nC
nS
nS
pF

V
V
V