nvd5890n ON Semiconductor, nvd5890n Datasheet - Page 4

• Manufacturer Part Number: nvd5890n
• Description: Nvd5890n Power Mosfet
• Manufacturer: ON Semiconductor

300
280
260
240
220
200
180
160
140
120
100
1.75
1.25
0.75
80
60
40
20
20
18
16
14
12
10
2.0
1.5
1.0
0.5
0
8
6
4
2
0
−50
3
0
10 V
7 V
V
I
Figure 3. On−Resistance vs. Drain Current
D
GS
−25
= 50 A
Figure 5. On−Resistance Variation with
Figure 1. On−Region Characteristics
V
4
= 10 V
V
GS
DS
I
D
, GATE−TO−SOURCE VOLTAGE (V)
T
1
, DRAIN−TO−SOURCE VOLTAGE (V)
0
J
= 50 A
, JUNCTION TEMPERATURE (°C)
6 V
5
25
Temperature
2
6
50
75
7
3
TYPICAL PERFORMANCE CURVES
100
8
125
T
4
T
J
V
J
GS
= 25°C
9
= 25°C
http://onsemi.com
3.8 V
4.2 V
3.6 V
150
4.5 V
= 5 V
4 V
10
175
5
4
1000
300
280
260
240
220
200
180
160
140
120
100
100
20
18
16
14
12
10
10
80
60
40
20
8
6
4
2
0
1
0
0
2
0
Figure 4. On−Resistance vs. Drain Current and
V
T
Figure 6. Drain−to−Source Leakage Current
V
J
DS
GS
= 25°C
4
40
≥ 10 V
= 0 V
V
V
Figure 2. Transfer Characteristics
T
DS
GS
J
8
, DRAIN−TO−SOURCE VOLTAGE (V)
= 150°C
, GATE−TO−SOURCE VOLTAGE (V)
80
3
I
12
T
D
, DRAIN CURRENT (A)
J
= 25°C
Gate Voltage
120
16
vs. Voltage
T
T
J
J
= 175°C
= 150°C
20
4
160
T
V
J
GS
= −55°C
24
= 5 V
200
28
5
V
240
GS
32
= 10 V
36
280
40
6