nvd5890n ON Semiconductor, nvd5890n Datasheet - Page 3

• Manufacturer Part Number: nvd5890n
• Description: Nvd5890n Power Mosfet
• Manufacturer: ON Semiconductor

DRAIN−SOURCE DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
J
= 25°C unless otherwise noted)
Symbol
Q
V
t
RR
ta
tb
SD
RR
http://onsemi.com
V
GS
V
V
I
I
S
S
GS
GS
= 0 V, dIs/dt = 100 A/ms,
= 50 A
= 20 A
3
= 0 V,
= 0 V,
Test Condition
I
S
= 50 A
T
T
J
J
= 25°C
= 25°C
Min
Typ
0.9
0.8
35
20
15
40
Max
1.2
1.0
Unit
nC
ns
V