tga2508-epu TriQuint Semiconductor, tga2508-epu Datasheet - Page 10

• Manufacturer Part Number: tga2508-epu
• Description: 12-19 Vsat Amplifier
• Manufacturer: TriQuint Semiconductor

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Reflow process assembly notes:
Component placement and adhesive attachment assembly notes:
Interconnect process assembly notes:
TriQuint Semiconductor Texas: Phone [phone] Fax [phone] Web: www.triquint.com
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C.
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200 C.
Assembly Process Notes
Advance Product Information
TGA2508-EPU
August 4, 2004
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