tk07h90a TOSHIBA Semiconductor CORPORATION, tk07h90a Datasheet - Page 3

• Manufacturer Part Number: tk07h90a
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
16
12
10
5
4
3
2
1
0
8
4
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
Tc = 25°C
Pulse test
Common source
V DS = 10 V
Pulse test
Drain−source voltage V
Gate−source voltage V
2
2
Drain current I
Tc = −55°C
100
4
⎪Y
4
I
I
D
D
fs
– V
– V
⎪ − I
25
1
DS
GS
D
6
6
Tc = −55°C
D
25
8
GS
(A)
DS
10
8
8
(V)
(V)
V GS = 4 V
100
6
4.75
5.25
4.5
5
10
10
10
3
0.1
10
20
16
12
10
1
8
6
4
2
0
8
4
0
0.1
0
0
Common source
Tc = 25°C
Pulse test
Drain−source voltage V
Gate−source voltage V
10
4
Drain current I
8
10
R
20
V
DS (ON)
8
I
DS
D
– V
V GS = 10 V
– V
1
5.75
DS
6
GS
− I
30
12
D
5.25
V GS = 4 V
5.5
4.5
D
5
GS
Common source
Tc = 25°C
Pulse test
(A)
Common source
Tc = 25°C
Pulse test
DS
40
16
(V)
(V)
TK07H90A
I D = 7 A
2006-11-13
3.5
1.7
50
20
10