tk07h90a TOSHIBA Semiconductor CORPORATION, tk07h90a Datasheet

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tk07h90a

Manufacturer Part Number
tk07h90a
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number:
TK07H90A
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Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
DD
Characteristic
Characteristic
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS IV)
= 90 V, T
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
= 25°C (initial), L = 18.4 mH, R
(Note 1)
(Note 2)
: I
: V
DSS
th
= 2.0~4.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
TK07H90A
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
stg
AS
AR
D
ch
D
DS (ON)
fs
| =5.0 S (typ.)
DS
= 1.6Ω (typ.)
= 10 V, I
−55~150
Rating
0.833
DS
Max
900
900
±30
150
491
150
21
15
50
7
7
1
G
= 720V)
= 25 Ω, I
D
= 1 mA)
°C / W
°C / W
Unit
Unit
AR
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 7 A
Weight: 3.8 g (typ.)
JEDEC
JEITA
TOSHIBA
1: GATE
2: DRAIN (HEAT SINK)
3: SOURCE
1
2-16K1A
TK07H90A
2006-11-13
2
3
Unit: mm

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tk07h90a Summary of contents

Page 1

... AR T 150 ° −55~150 °C stg Symbol Max Unit R 0.833 ° (ch− ° (ch− Ω TK07H90A 1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE JEDEC ― JEITA ― TOSHIBA 2-16K1A Weight: 3.8 g (typ 2006-11-13 Unit ...

Page 2

... Test Condition I — — DRP DSF 100 A / μ TK07H90A Min Typ. Max — — ±10 ±30 — — — — 100 900 — — 2.0 — 4.0 — 1.6 2.0 3.5 5.0 — — 1650 — ...

Page 3

... Drain−source voltage Gate−source voltage V 10 Common source Tc = 25°C Pulse test 1 100 0.1 10 0.1 3 TK07H90A I – Common source 25° Pulse test 5.75 5.5 5. – Common source Tc = 25° ...

Page 4

... C rss 1 0 −80 −40 100 100 (V) 500 V DS 400 300 V DD =100 V 200 100 0 0 200 Total gate charge Q 4 TK07H90A − −0.4 −0.8 −1.2 −1.6 (V) DS − Common source ...

Page 5

... Channel temperature (initial 1000 −15 V (V) Test circuit = 25 Ω = 18 TK07H90A Duty = t (ch-c) = 0.833°C – 100 125 150 (° VDSS I AR ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 TK07H90A 20070701-EN 2006-11-13 ...

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