gf4435 Greenray Industries Inc., gf4435 Datasheet
gf4435
Manufacturer Part Number
gf4435
Description
P-channel Enhancement-mode Mosfet Neral Semiconductor
Manufacturer
Greenray Industries Inc.
Datasheet
1.GF4435.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GF4435
Manufacturer:
GENERAL
Quantity:
20 000
Mechanical Data
Case: SO-8 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any
Maximum Ratings and Thermal Characteristics
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient Thermal Resistance
Note: (1) Surface Mounted on FR4 Board, t
0.050 (1.27)
8
1
0.197 (5.00)
0.189 (4.80)
0.009 (0.23)
0.004 (0.10)
5
4
0.157 (3.99)
0.150 (3.81)
0.020 (0.51)
0.013 (0.33)
SO-8
0.069 (1.75)
0.053 (1.35)
0.244 (6.20)
0.228 (5.79)
Weight: 0.5g
10 sec.
0 – 8
T
T
Dimensions in inches
A
A
0.019 (0.48)
0.010 (0.25)
P-Channel Enhancement-Mode MOSFET
and (millimeters)
= 25°C
= 70°C
x 45
(1)
0.016 (0.41)
0.050(1.27)
0.009 (0.23)
0.007 (0.18)
Symbol
T
R
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
• Specially Designed for Low Voltage DC/DC
• Fast Switching for High Efficiency
J
V
V
I
P
, T
DM
I
On-Resistance
Converters
DS
GS
D
D
JA
stg
0.035 (0.889)
0.025 (0.635)
V
(T
DS
0.245 (6.22)
A
= 25°C unless otherwise noted)
Min.
–30V R
Mounting Pad Layout
–55 to 150
Limit
– 8.0
±
– 50
–30
2.5
1.6
50
20
DS(ON)
20
GF4435
0.05 (1.27)
0.04 (1.02)
m
0.050 typ.
0.165 (4.19)
0.155 (3.94)
(1.27)
°C/W
Unit
°C
W
V
A
I
D
–8.0A
7/10/01
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