gfb75n03 Greenray Industries Inc., gfb75n03 Datasheet

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gfb75n03

Manufacturer Part Number
gfb75n03
Description
N-channel Enhancement-mode Mosfet Neral Semiconductor
Manufacturer
Greenray Industries Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GFB75N03
Manufacturer:
GS
Quantity:
2 550
0.360 (9.14)
Mechanical Data
Case: JEDEC TO-263 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any
Maximum Ratings and Thermal Characteristics
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Lead Temperature (1/8” from case for 5 sec.)
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Notes: (1) Maximum DC current limited by the package
0.320 (8.13)
0.096 (2.43)
0.102 (2.59)
Seating Plate
-T-
(2) 1-in
0.027 (0.686)
0.037 (0.940)
2
0.420 (10.67)
2oz. Cu PCB mounted
0.21 (5.33)
0.380 (9.65)
G
Min.
PIN
D
D
S
TO-263AB
(1)
0.625 (15.88)
0.575 (14.60)
Weight: 1.3g
0.155 (3.94)
0.120 (3.05)
0.160 (4.06)
0.190 (4.83)
T
T
(2)
A
A
N-Channel Enhancement-Mode MOSFET
= 25°C
= 100°C
0.055 (1.39)
0.066 (1.68)
0.045 (1.14)
0.055 (1.40)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
Dimensions in inches
and (millimeters)
Symbol
T
R
R
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
J
V
V
I
P
, T
T
DM
I
DS
GS
D
D
L
JC
JA
stg
(T
C
V
= 25°C unless otherwise noted)
DS
G
(17.02)
(2.032)
0.63
0.08
30V R
–55 to 150
Limit
69.4
27.8
± 20
240
275
1.8
30
80
40
(6.096)
(10.66)
0.24
0.42
DS(ON)
GFB75N03
D
S
(3.05)
0.12
(8.38)
0.33
6.5m
Mounting Pad
Layout
°C/W
°C/W
Unit
°C
°C
W
V
A
I
D
5/1/01
80A

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gfb75n03 Summary of contents

Page 1

... Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Symbol 25° 100° stg ( GFB75N03 V 30V R 6.5m DS DS(ON 0.42 (10.66) 0.33 (8.38) 0.63 (17.02) Mounting Pad Layout 0.08 (2.032) 0.12 (3.05) 0.24 (6.096 25°C unless otherwise noted) C Limit Unit 30 V ± ...

Page 2

... V = 15V oss f = 1.0MH C rss I – 38A Switching R D Waveforms V D OUT Output, V DUT S GFB75N03 Min Typ Max 30 – – = 38A – 5.8 6.5 = 31A – 8.5 9.5 1.0 – 3 – – 1 – – ±100 = 10V 75 – – – 61 – ...

Page 3

... I = 250 A D 0.014 0.012 0.01 0.008 0.006 0.004 0.002 0 75 100 125 150 0 75 100 125 150 GFB75N03 Fig. 2 – Transfer Characteristics V = 10V 125 Gate-to-Source Voltage (V) GS Fig. 4 – On-Resistance vs. Drain Current 10V ...

Page 4

... 38A 100 f = 1MH 0.1 0. GFB75N03 Fig. 7 – Gate Charge V = 15V 38A Gate Charge (nC) g Fig. 9 – Source-Drain Diode Forward Voltage 125 --55 C 0.2 ...

Page 5

... A 1 0.1 0.01 150 75 100 125 0.0001 Fig. 13 – Maximum Safe Operating Area 1000 Single Pulse R = 1.8 C 100 0.1 GFB75N03 Fig. 11 – Transient Thermal Impedance D = 0.5 0 0.1 0. Single Pulse 1. Duty Cycle ( JC(norm 1.8 C ...

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