blf278-01 NXP Semiconductors, blf278-01 Datasheet - Page 5
blf278-01
Manufacturer Part Number
blf278-01
Description
Vhf Push-pull Power Mos Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BLF278-01.pdf
(23 pages)
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Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
(mV/K)
R DSon
V
Fig.4
V
Fig.6
(m )
T.C.
DS
GS
400
300
200
100
= 10 V.
= 10 V; I
0
1
2
3
4
5
0
10
0
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
2
D
= 5 A.
10
50
1
100
1
T j ( C)
I D (A)
MGE621
MGE623
150
10
5
handbook, halfpage
handbook, halfpage
V
Fig.5
(pF)
V
Fig.7
C
DS
GS
(A)
1200
I D
800
400
= 10 V; T
= 0; f = 1 MHz.
30
20
10
0
0
0
0
Drain current as a function of gate-source
voltage; typical values per section.
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
j
= 25 C.
20
5
10
40
Product Specification
C os
C is
V GS (V)
V DS (V)
BLF278
MGE622
MGE615
15
60
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