bso080p03ns3g Infineon Technologies Corporation, bso080p03ns3g Datasheet - Page 6

• Manufacturer Part Number: bso080p03ns3g
• Description: Optimos 3 P3-power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
DS
=f(T
11
10
4
3
2
1
9
8
7
6
5
4
3
); V
-60
0
j
); I
GS
D
=0 V; f =1 MHz
=14.8 A; V
-20
10
20
98 %
GS
V
T
DS
=10 V
j
60
[°C]
Coss
Ciss
[V]
typ
Crss
100
20
140
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
-1
3
2
1
0
-60
)
0
j
); V
j
GS
-20
=V
0.5
DS
20
; I
150 °C, 98%
D
150 °C
=-150µA
V
T
SD
j
60
[°C]
1
25 °C
[V]
BSO080P03NS3 G
25 °C, 98%
100
1.5
140
2009-05-26
180
2