bso080p03ns3g Infineon Technologies Corporation, bso080p03ns3g Datasheet - Page 4

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bso080p03ns3g

Manufacturer Part Number
bso080p03ns3g
Description
Optimos 3 P3-power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
Rev. 2.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
2.5
1.5
0.5
10
10
10
10
3
2
1
0
DS
-1
3
2
1
0
A
10
0
); T
); t
-1
limited by on-state
resistance
p
A
p
≤10 s
=25 °C
40
2)
; D =0
10
0
T
V
A
DS
80
10 s
[°C]
[V]
100 ms
1 ms
10 ms
10
100 µs
1
10 µs
120
1 µs
160
10
page 4
2
2 Drain current
I
parameter: V
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
=f(t
16
12
10
10
10
10
10
8
4
0
A
-1
-2
2
1
0
); t
0
10
p
)
-6
2)
p
≤10 s
10
GS
-5
p
/T
0.02
0.01
0.5
40
0.2
0.05
10
0.1
-4
single pulse
10
6.0 V
-3
T
t
A
80
10
p
[°C]
[s]
-2
BSO080P03NS3 G
10
-1
120
10
10 V
0
10
1
2009-05-26
160
10
2

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