tpcc8103 TOSHIBA Semiconductor CORPORATION, tpcc8103 Datasheet - Page 5

• Manufacturer Part Number: tpcc8103
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
−30
−20
−10
100
30
24
12
18
10
0
0
6
−0.1
−80
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
V GS = 4 V
V DS
−40
Drain-source voltage V
Ambient temperature Ta (
V GS = 10 V
Total gate charge Q
−8
Dynamic input/output
Capacitance – V
−1
0
R
characteristics
−16
DS (ON)
V DD = −6 V
40
I D = −18 A
– Ta
−24
−24
I D = −4.5, −9, −18 A
−10
80
g
DS
DS
Common source
I D = −18 A
Ta = 25°C
Pulse test
(nC)
−32
−4.5, −9 A
°
−12
(V)
C)
120
C oss
C iss
C rss
−100
160
−40
−12
−8
−4
0
5
−100
−0.1
−2.5
−1.0
−0.5
−2.0
−1.5
−10
−1
−80
0
0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
−40
Drain-source voltage V
Ambient temperature Ta (
0.2
−10
0
0.4
I
DR
V
th
−1
– V
40
– Ta
DS
0.6
−4.5
−3
80
DS
Common source
Ta = 25°C
Pulse test
V GS = 0 V
0.8
°
(V)
120
C)
TPCC8103
2009-07-15
160
1.0