tpcc8103 TOSHIBA Semiconductor CORPORATION, tpcc8103 Datasheet - Page 4

• Manufacturer Part Number: tpcc8103
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
−20
−16
−12
−40
−30
−20
−10
100
0.1
10
−8
−4
0
0
1
−0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
10
Drain-source voltage V
Gate-source voltage V
−0.2
−1
8
6
Drain current I
Ta = −55°C
5
−1
100
−0.4
−2
4
4.5
⎪Y
I
I
D
D
100
fs
– V
– V
Ta = −55°C
⎪ – I
25
DS
GS
−0.6
−3
D
25
D
3.2
−10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
−0.8
V GS = 2.4 V
−4
(V)
(V)
2.6
2.8
3
−100
−5
−1
4
−1.0
−0.8
−0.6
−0.4
−0.2
−50
−40
−30
−20
−10
100
10
0
0
−0.1
1
0
0
Common source
Ta = 25°C
Pulse test
10
8
6
Drain-source voltage V
Gate-source voltage V
−0.4
5
−2
Drain current I
4.5
−1
R
−0.8
V
−4
DS (ON)
I
DS
D
– V
4.5
– V
V GS = 4 V
DS
GS
−1.2
– I
10
9
−6
D
D
3.8
−10
4
I D = 18 A
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
−1.6
V GS = 2.6 V
−8
(V)
(V)
TPCC8103
2009-07-15
3.2
2.8
3.6
3.4
3
−100
−10
−2