tpcc8102 TOSHIBA Semiconductor CORPORATION, tpcc8102 Datasheet - Page 6

• Manufacturer Part Number: tpcc8102
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−100
−0.1
2.5
2.0
1.5
1.0
0.5
−10
−1
0
−0.1
0
Curves must be derated
linearly with increase in
temperature.
I D max (Pulse) *
* Single-pulse
(1)
(2)
Ta = 25℃
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
t = 10 s
Drain-source voltage V
Ambient temperature Ta (
40
1000
0.01
100
Safe operating area
0.1
0.0001
10
−1
1
t =10 ms*
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc = 25℃
P
D
80
– Ta
0.001
V DSS max
−10
t =1 ms*
DS
120
(V)
°
C)
0.01
−100
160
Pulse width t
0.1
r
th
6
– t
w
w
1
(s)
40
30
20
10
0
0
10
Case temperature T
Single - pulse
40
100
P
D
80
(2)
(1)
(3)
– Tc
1000
C
120
(
°
C)
TPCC8102
2009-08-06
160